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HSM88WK - Silicon Schottky Barrier Diode for Balanced Mixer

Features

  • Proof against high voltage.
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WK Laser Mark C4 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM88WK Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Notes 1.Per one device Symbol VR IO.
  • 1 Value 10 15 125.
  • 55 to +125 Unit V mA °C °C Tj Tstg.

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Datasheet Details

Part number HSM88WK
Manufacturer Hitachi (now Renesas)
File Size 28.71 KB
Description Silicon Schottky Barrier Diode for Balanced Mixer
Datasheet download datasheet HSM88WK Datasheet
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Full PDF Text Transcription

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HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-0489F (Z) Rev 6 Jul 1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WK Laser Mark C4 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM88WK Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Notes 1.Per one device Symbol VR IO *1 Value 10 15 125 –55 to +125 Unit V mA °C °C Tj Tstg Electrical Characteristics (Ta = 25°C) *1 Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *2 Typ — — — — — — — — Max 420 580 0.
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